GB01SLT12-252 GeneSiC Semiconductor
auf Bestellung 4248 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.87 EUR |
| 16+ | 3.35 EUR |
| 25+ | 3.15 EUR |
| 100+ | 2.89 EUR |
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Technische Details GB01SLT12-252 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 69pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: TO-252, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V.
Weitere Produktangebote GB01SLT12-252
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GB01SLT12-252 | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Schottky 1.2KV 5A 3-Pin(2+Tab) TO-252 |
Produkt ist nicht verfügbar |
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GB01SLT12-252 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GB01SLT12-252 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 1A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
Produkt ist nicht verfügbar |
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GB01SLT12-252 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 1A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
Produkt ist nicht verfügbar |
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GB01SLT12-252 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A |
Produkt ist nicht verfügbar |