GB02SHT01-46 GeneSiC Semiconductor
auf Bestellung 11 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 109.56 EUR |
| 5+ | 106.52 EUR |
| 10+ | 102.1 EUR |
| 25+ | 94.74 EUR |
| 50+ | 93.55 EUR |
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Technische Details GB02SHT01-46 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 100V 4A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-46, Operating Temperature - Junction: -55°C ~ 210°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote GB02SHT01-46 nach Preis ab 94.5 EUR bis 116.14 EUR
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GB02SHT01-46 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARBIDE 100V 4A TO46Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 210°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 175 Stücke: Lieferzeit 21-28 Tag (e) |
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