GB02SHT03-46

GB02SHT03-46 GeneSiC Semiconductor


GB02SHT03-46.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 106 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+117.26 EUR
10+ 109.4 EUR
100+ 94.99 EUR
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Technische Details GB02SHT03-46 GeneSiC Semiconductor

Description: DIODE SIL CARBIDE 300V 4A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-46, Operating Temperature - Junction: -55°C ~ 225°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.

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GB02SHT03-46 GB02SHT03-46 Hersteller : GeneSiC Semiconductor GB02SHT03-46-1856206.pdf Schottky Diodes & Rectifiers SiC Schottky Diode
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