GB02SLT12-252 GeneSiC Semiconductor
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Technische Details GB02SLT12-252 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 131pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote GB02SLT12-252
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GB02SLT12-252 | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Schottky 1.2KV 7A 3-Pin(2+Tab) TO-252 |
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GB02SLT12-252 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A Anzahl je Verpackung: 1 Stücke |
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GB02SLT12-252 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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GB02SLT12-252 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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GB02SLT12-252 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rect. |
Produkt ist nicht verfügbar |
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GB02SLT12-252 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A |
Produkt ist nicht verfügbar |