GB20SLT12-247

GB20SLT12-247 GeneSiC Semiconductor


GB20SLT12-247-1568221.pdf Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers Silicon Carbide Schottky, 1200V
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Lieferzeit 14-28 Tag (e)
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Technische Details GB20SLT12-247 GeneSiC Semiconductor

Description: DIODE SIL CARB 1.2KV 20A TO247-2, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 968pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.

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GB20SLT12-247 GB20SLT12-247 Hersteller : GeneSiC SEMICONDUCTOR GB20SLT12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GB20SLT12-247 GB20SLT12-247 Hersteller : GeneSiC Semiconductor GB20SLT12-247.pdf Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
GB20SLT12-247 GB20SLT12-247 Hersteller : GeneSiC SEMICONDUCTOR GB20SLT12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Produkt ist nicht verfügbar