GB2X100MPS12-227 GeneSiC Semiconductor
auf Bestellung 110 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 318.03 EUR |
| 10+ | 296.48 EUR |
| 30+ | 288.26 EUR |
| 100+ | 284.7 EUR |
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Technische Details GB2X100MPS12-227 GeneSiC Semiconductor
Description: SIC DIODE 1200V 200A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 185A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote GB2X100MPS12-227 nach Preis ab 353.24 EUR bis 385.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GB2X100MPS12-227 | Hersteller : GeneSiC Semiconductor |
 Description: SIC DIODE 1200V 200A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 185A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
auf Bestellung 51 Stücke: Lieferzeit 21-28 Tag (e) |
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GB2X100MPS12-227 | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Power |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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GB2X100MPS12-227 | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Power |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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GB2X100MPS12-227 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GB2X100MPS12-227 | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Power |
Produkt ist nicht verfügbar |
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GB2X100MPS12-227 | Hersteller : GeneSiC Semiconductor |
Silicon Carbide Power |
Produkt ist nicht verfügbar |
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GB2X100MPS12-227 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |