GBL08L-5306E3/45 Vishay General Semiconductor - Diodes Division


GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Technische Details GBL08L-5306E3/45 Vishay General Semiconductor - Diodes Division

Description: BRIDGE RECT 1PHASE 800V 3A GBL, Packaging: Tube, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Part Status: Obsolete, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 3 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.