GBPC35010T GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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Technische Details GBPC35010T GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC, Packaging: Bulk, Package / Case: 4-Square, GBPC, Mounting Type: QC Terminal, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBPC, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 35 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote GBPC35010T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GBPC35010T | Hersteller : GeneSiC Semiconductor |
 Bridge Rectifiers 1000 V - 35 A |
Produkt ist nicht verfügbar |