GD10MPS12E GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 1.2KV 29A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 2397 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 8.61 EUR |
| 10+ | 7.56 EUR |
| 25+ | 7.18 EUR |
| 100+ | 6.65 EUR |
| 250+ | 6.31 EUR |
| 500+ | 6.07 EUR |
| 1000+ | 5.86 EUR |
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Technische Details GD10MPS12E GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 29A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 367pF @ 1V, 1MHz, Current - Average Rectified (Io): 29A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote GD10MPS12E nach Preis ab 5.88 EUR bis 8.66 EUR
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GD10MPS12E | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 1200V 10A TO-252-2 SiC Schottky MPS |
auf Bestellung 4127 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD10MPS12E | Hersteller : GeneSiC SEMICONDUCTOR |
GD10MPS12E SMD Schottky diodes |
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GD10MPS12E | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 29A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 367pF @ 1V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
Produkt ist nicht verfügbar |