GD15MPS17H GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 1.7KV 36A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 26.73 EUR |
| 10+ | 24.1 EUR |
| 25+ | 23.14 EUR |
| 100+ | 21.75 EUR |
| 250+ | 20.86 EUR |
| 500+ | 20.24 EUR |
| 1000+ | 19.61 EUR |
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Technische Details GD15MPS17H GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 36A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1082pF @ 1V, 1MHz, Current - Average Rectified (Io): 36A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V.
Weitere Produktangebote GD15MPS17H nach Preis ab 13.01 EUR bis 18.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GD15MPS17H | Hersteller : GeneSiC SEMICONDUCTOR |
GD15MPS17H THT Schottky diodes |
auf Bestellung 519 Stücke: Lieferzeit 7-14 Tag (e) |
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