GD20MPS12A GeneSiC Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 151-165 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.42 EUR |
10+ | 13.81 EUR |
25+ | 13.23 EUR |
100+ | 12.35 EUR |
250+ | 11.86 EUR |
500+ | 11.47 EUR |
1000+ | 11.08 EUR |
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Technische Details GD20MPS12A GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 42A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 737pF @ 1V, 1MHz, Current - Average Rectified (Io): 42A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote GD20MPS12A nach Preis ab 13.46 EUR bis 15.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GD20MPS12A | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 42A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
auf Bestellung 49 Stücke: Lieferzeit 21-28 Tag (e) |
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GD20MPS12A | Hersteller : GeneSiC Semiconductor | 1200V 20A TO-220-2 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GD20MPS12A | Hersteller : GeneSiC Semiconductor | 1200V 20A TO-220-2 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GD20MPS12A | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GD20MPS12A | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V |
Produkt ist nicht verfügbar |