GD60MPS06H GeneSiC Semiconductor
auf Bestellung 1632 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 27.77 EUR |
| 10+ | 25.01 EUR |
| 30+ | 23.97 EUR |
| 120+ | 22.49 EUR |
| 270+ | 21.55 EUR |
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Technische Details GD60MPS06H GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 82A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1463pF @ 1V, 1MHz, Current - Average Rectified (Io): 82A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Weitere Produktangebote GD60MPS06H nach Preis ab 22.97 EUR bis 33.12 EUR
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GD60MPS06H | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 82A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1463pF @ 1V, 1MHz Current - Average Rectified (Io): 82A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
auf Bestellung 1678 Stücke: Lieferzeit 21-28 Tag (e) |
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