GKI04048 Sanken
Hersteller: SankenDescription: MOSFET N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
auf Bestellung 2416 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.21 EUR |
| 10+ | 3.76 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.42 EUR |
| 1000+ | 1.91 EUR |
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Technische Details GKI04048 Sanken
Description: MOSFET N-CH 40V 14A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V, Power Dissipation (Max): 3.1W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 650µA, Supplier Device Package: 8-DFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V.
Weitere Produktangebote GKI04048
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GKI04048 | Hersteller : Sanken Electric Co. |
Trans MOSFET N-CH 40V 14A 8-Pin DFN EP |
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GKI04048 | Hersteller : Allegro Microsystems |
Trans MOSFET N-CH 40V 14A 8-Pin DFN EP |
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GKI04048 | Hersteller : Sanken |
Description: MOSFET N-CH 40V 14A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
Produkt ist nicht verfügbar |