H11AA1TVM onsemi
Hersteller: onsemiDescription: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 2868 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.42 EUR |
| 17+ | 1.58 EUR |
| 100+ | 1.04 EUR |
| 1000+ | 0.82 EUR |
| 2000+ | 0.76 EUR |
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Technische Details H11AA1TVM onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP, Packaging: Tube, Package / Case: 6-DIP (0.400", 10.16mm), Output Type: Transistor with Base, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 100°C, Voltage - Forward (Vf) (Typ): 1.17V, Input Type: AC, DC, Current - Output / Channel: 50mA, Voltage - Isolation: 4170Vrms, Current Transfer Ratio (Min): 20% @ 10mA, Vce Saturation (Max): 400mV, Supplier Device Package: 6-DIP, Voltage - Output (Max): 30V, Part Status: Active, Number of Channels: 1, Current - DC Forward (If) (Max): 60 mA.
Weitere Produktangebote H11AA1TVM nach Preis ab 0.71 EUR bis 2.44 EUR
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Description: ONSEMI - H11AA1TVM - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
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