HERA808G Taiwan Semiconductor
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.67 EUR |
| 10+ | 1.37 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.69 EUR |
| 5000+ | 0.66 EUR |
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Technische Details HERA808G Taiwan Semiconductor
Description: DIODE GEN PURP 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote HERA808G nach Preis ab 0.71 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| HERA808G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 2095 Stücke: Lieferzeit 10-14 Tag (e) |
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