HFA3102BZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: RF TRANS 6 NPN 12V 10GHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 6 NPN
Operating Temperature: 150°C (TJ)
Gain: 12.4dB ~ 17.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Supplier Device Package: 14-SOIC
auf Bestellung 1820 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 20.57 EUR |
| 10+ | 17.63 EUR |
| 100+ | 14.69 EUR |
| 500+ | 12.96 EUR |
| 1000+ | 11.66 EUR |
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Technische Details HFA3102BZ Renesas Electronics Corporation
Description: RF TRANS 6 NPN 12V 10GHZ 14SOIC, Packaging: Tube, Package / Case: 14-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 6 NPN, Operating Temperature: 150°C (TJ), Gain: 12.4dB ~ 17.5dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz, Supplier Device Package: 14-SOIC.
Weitere Produktangebote HFA3102BZ nach Preis ab 11.86 EUR bis 20.9 EUR
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HFA3102BZ | Hersteller : Renesas / Intersil |
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| HFA3102BZ | Hersteller : RENESAS |
Category: NPN SMD transistors Description: Transistor: NPN x6; bipolar; RF; 8V; 30mA; 250mW; SO14 Type of transistor: NPN x6 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 30mA Power dissipation: 0.25W Case: SO14 Current gain: 70 Mounting: SMD Frequency: 10GHz Features of semiconductor devices: dual long-tailed pair transistor array Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| HFA3102BZ | Hersteller : RENESAS |
Category: NPN SMD transistors Description: Transistor: NPN x6; bipolar; RF; 8V; 30mA; 250mW; SO14 Type of transistor: NPN x6 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 30mA Power dissipation: 0.25W Case: SO14 Current gain: 70 Mounting: SMD Frequency: 10GHz Features of semiconductor devices: dual long-tailed pair transistor array |
Produkt ist nicht verfügbar |