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HGT1S10N120BNST

HGT1S10N120BNST onsemi


hgtp10n120bn-d.pdf Hersteller: onsemi
Description: IGBT 1200V 35A 298W TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
auf Bestellung 690 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.85 EUR
10+ 8.28 EUR
100+ 6.69 EUR
Mindestbestellmenge: 3
Produktrezensionen
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Technische Details HGT1S10N120BNST onsemi

Description: IGBT 1200V 35A 298W TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/165ns, Switching Energy: 320µJ (on), 800µJ (off), Test Condition: 960V, 10A, 10Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 298 W.

Weitere Produktangebote HGT1S10N120BNST nach Preis ab 5.17 EUR bis 10.01 EUR

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HGT1S10N120BNST HGT1S10N120BNST Hersteller : onsemi / Fairchild HGTP10N120BN_D-2314406.pdf IGBT Transistors N-Channel IGBT NPT Series 1200V
auf Bestellung 56000 Stücke:
Lieferzeit 745-759 Tag (e)
Anzahl Preis ohne MwSt
6+10.01 EUR
10+ 8.4 EUR
25+ 7.93 EUR
100+ 6.79 EUR
250+ 6.4 EUR
500+ 6.08 EUR
800+ 5.17 EUR
Mindestbestellmenge: 6
HGT1S10N120BNST HGT1S10N120BNST
Produktcode: 104642
hgtp10n120bn-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
ZCODE: 8541290010
Produkt ist nicht verfügbar
HGT1S10N120BNST HGT1S10N120BNST Hersteller : ON Semiconductor hgtp10n120bn-d.pdf Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
HGT1S10N120BNST HGT1S10N120BNST Hersteller : ON Semiconductor hgtp10n120bn-d.pdf Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
HGT1S10N120BNST HGT1S10N120BNST Hersteller : onsemi hgtp10n120bn-d.pdf Description: IGBT 1200V 35A 298W TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
HGT1S10N120BNST HGT1S10N120BNST Hersteller : ONSEMI hgtp10n120bn-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 298W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
HGT1S10N120BNS HGT1S10N120BNS Hersteller : ON Semiconductor hgtp10n120bn-d.pdf Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
HGT1S10N120BNS HGT1S10N120BNS Hersteller : onsemi hgtp10n120bn-d.pdf Description: IGBT 1200V 35A 298W TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
HGT1S10N120BNS HGT1S10N120BNS Hersteller : onsemi / Fairchild HGTP10N120BN_D-1810363.pdf IGBT Transistors 35A 1200V NPT N-Ch
Produkt ist nicht verfügbar