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HGT1S12N60A4DS

HGT1S12N60A4DS Fairchild Semiconductor

FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: IGBT, 54A, 600V, N-CHANNEL, TO-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 2433 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
81+8.91 EUR
Mindestbestellmenge: 81
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Technische Details HGT1S12N60A4DS Fairchild Semiconductor

Description: IGBT, 54A, 600V, N-CHANNEL, TO-2, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-263AB, Td (on/off) @ 25°C: 17ns/96ns, Switching Energy: 55µJ (on), 50µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 167 W.

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HGT1S12N60A4DS Hersteller : On Semiconductor/Fairchild FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw hgt1s12n60a4ds-d.pdf
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
HGT1S12N60A4DS HGT1S12N60A4DS
Produktcode: 50012 		FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw hgt1s12n60a4ds-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
HGT1S12N60A4DS HGT1S12N60A4DS Hersteller : ON Semiconductor hgt1s12n60a4ds-d.pdf Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
HGT1S12N60A4DS HGT1S12N60A4DS Hersteller : onsemi hgt1s12n60a4ds-d.pdf Description: IGBT 600V 54A 167W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar