HGT1S20N60A4S9A ON Semiconductor

Description: IGBT 600V 70A 290W TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 15ns/73ns, Switching Energy: 105µJ (on), 150µJ (off), Test Condition: 390V, 20A, 3Ohm, 15V, Gate Charge: 142 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 280 A, Power - Max: 290 W.