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HGTD7N60C3S9A

HGTD7N60C3S9A Fairchild Semiconductor

FAIRS30061-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 249 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
249+2.9 EUR
Mindestbestellmenge: 249
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Technische Details HGTD7N60C3S9A Fairchild Semiconductor

Description: IGBT 600V 14A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A, Supplier Device Package: TO-252AA, Switching Energy: 165µJ (on), 600µJ (off), Gate Charge: 23 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.

Weitere Produktangebote HGTD7N60C3S9A nach Preis ab 2.08 EUR bis 4.37 EUR

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Preis ohne MwSt
HGTD7N60C3S9A HGTD7N60C3S9A Hersteller : onsemi hgtd7n60c3s-d.pdf Description: IGBT 600V 14A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252AA
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 2006 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
10+ 3.63 EUR
100+ 2.89 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
HGTD7N60C3S9A HGTD7N60C3S9A Hersteller : ON Semiconductor 3663467848115091hgtd7n60c3s.pdf Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
HGTD7N60C3S9A HGTD7N60C3S9A Hersteller : onsemi hgtd7n60c3s-d.pdf Description: IGBT 600V 14A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-252AA
Switching Energy: 165µJ (on), 600µJ (off)
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Produkt ist nicht verfügbar
HGTD7N60C3S9A HGTD7N60C3S9A Hersteller : onsemi / Fairchild HGTD7N60C3S_D-2314692.pdf IGBT Transistors 14a 600V N-Ch IGBT UFS Series
Produkt ist nicht verfügbar