HGTG12N60A4
Hersteller: auf Bestellung 9826 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details HGTG12N60A4
Description: IGBT 600V 54A 167W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 17ns/96ns, Switching Energy: 55µJ (on), 50µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 78 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 167 W.
Weitere Produktangebote HGTG12N60A4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HGTG12N60A4 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail |
Produkt ist nicht verfügbar |
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HGTG12N60A4 | Hersteller : onsemi |
Description: IGBT 600V 54A 167W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 17ns/96ns Switching Energy: 55µJ (on), 50µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 78 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 167 W |
Produkt ist nicht verfügbar |