Technische Details HGTP5N120BND fairchild
Description: IGBT NPT 1200V 21A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A, Supplier Device Package: TO-220-3, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/160ns, Switching Energy: 450µJ (on), 390µJ (off), Test Condition: 960V, 5A, 25Ohm, 15V, Gate Charge: 53 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 167 W.
Weitere Produktangebote HGTP5N120BND
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| HGTP5N120BND | Hersteller : FAIRCHIL.. |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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HGTP5N120BND | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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HGTP5N120BND | Hersteller : onsemi |
Description: IGBT NPT 1200V 21A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Supplier Device Package: TO-220-3 IGBT Type: NPT Td (on/off) @ 25°C: 22ns/160ns Switching Energy: 450µJ (on), 390µJ (off) Test Condition: 960V, 5A, 25Ohm, 15V Gate Charge: 53 nC Part Status: Obsolete Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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HGTP5N120BND | Hersteller : onsemi / Fairchild |
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch |
Produkt ist nicht verfügbar |