Produkte > HIP > HIP2101EIB

HIP2101EIB


hip2101-datasheet Hersteller:
07+
auf Bestellung 110 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details HIP2101EIB

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.

Weitere Produktangebote HIP2101EIB

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HIP2101EIB HIP2101EIB Hersteller : Renesas Electronics Corporation hip2101-datasheet Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar