HS1D R3G

HS1D R3G

HS1D R3G

Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 1A, 200V, High Efficient Recovery Rectifier
HS1A_SERIES_K15-1918167.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 650 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details HS1D R3G

Description: DIODE GEN PURP 200V 1A DO214AC, Package / Case: DO-214AC, SMA, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Reverse Leakage @ Vr: 5µA @ 200V, Reverse Recovery Time (trr): 50ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Voltage - Forward (Vf) (Max) @ If: 1V @ 1A, Current - Average Rectified (Io): 1A, Voltage - DC Reverse (Vr) (Max): 200V, Diode Type: Standard.

Preis HS1D R3G ab 0 EUR bis 0 EUR

HS1D R3G
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 50ns Automotive 2-Pin SMA T/R
HS1A%20SERIES_K15.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS1D R3G
HS1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
HS1A%20SERIES_K15.pdf
auf Bestellung 3570 Stücke
Lieferzeit 21-28 Tag (e)
HS1D R3G
HS1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
HS1A%20SERIES_K15.pdf
auf Bestellung 674 Stücke
Lieferzeit 21-28 Tag (e)
HS1D R3G
HS1D R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
HS1A%20SERIES_K15.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen