HS1ML RVG Taiwan Semiconductor
auf Bestellung 3481 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 436+ | 0.35 EUR |
| 437+ | 0.32 EUR |
| 438+ | 0.3 EUR |
| 500+ | 0.28 EUR |
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Technische Details HS1ML RVG Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote HS1ML RVG nach Preis ab 0.32 EUR bis 0.36 EUR
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HS1ML RVG | Hersteller : Taiwan Semiconductor |
 Diode Switching 1KV 1A 2-Pin Sub SMA T/R |
auf Bestellung 3481 Stücke: Lieferzeit 14-21 Tag (e) |
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HS1ML RVG | Hersteller : Taiwan Semiconductor |
Diode Switching 1KV 1A 2-Pin Sub SMA T/R |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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HS1ML RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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HS1ML RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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HS1ML RVG | Hersteller : Taiwan Semiconductor |
Rectifiers 75ns 1A 1000V High E ff Recovery Rect |
Produkt ist nicht verfügbar |