HS2DAL Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.94 EUR |
| 36+ | 0.73 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.25 EUR |
| 5000+ | 0.24 EUR |
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Technische Details HS2DAL Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 32pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: Thin SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
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HS2DAL | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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