Technische Details HUF75343S3S FAIRCHILD
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote HUF75343S3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| HUF75343S3S | Hersteller : FAIRCHILD |
 07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75343S3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 55V 75A 3-Pin(2+Tab) TO-263AB Rail |
Produkt ist nicht verfügbar |
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HUF75343S3S | Hersteller : onsemi |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
Produkt ist nicht verfügbar |
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HUF75343S3S | Hersteller : onsemi / Fairchild |
MOSFET PWR MOS ULTRAFET 55V/75A/0.009OHMS N-CHANNEL TO-262AB |
Produkt ist nicht verfügbar |