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HUF75639S3

HUF75639S3 Harris Corporation

HRISS01168-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 5441 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
207+3.51 EUR
Mindestbestellmenge: 207
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Technische Details HUF75639S3 Harris Corporation

Description: MOSFET N-CH 100V 56A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.

Weitere Produktangebote HUF75639S3 nach Preis ab 3.17 EUR bis 6.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HUF75639S3 HUF75639S3 Hersteller : onsemi huf75639g3-d.pdf Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.47 EUR
10+ 5.45 EUR
100+ 4.41 EUR
800+ 3.92 EUR
Mindestbestellmenge: 5
HUF75639S3 HUF75639S3 Hersteller : onsemi / Fairchild HUF75639S3S_D-2314668.pdf MOSFET TO-262
auf Bestellung 152 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.53 EUR
10+ 5.49 EUR
50+ 5.38 EUR
100+ 4.42 EUR
250+ 4.34 EUR
500+ 3.95 EUR
1000+ 3.17 EUR
Mindestbestellmenge: 8
HUF75639S3 Hersteller : ONSEMI HUF75639S3S-D.PDF Description: ONSEMI - HUF75639S3 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
HUF75639S3 HUF75639S3 Hersteller : ON Semiconductor huf75639s3s-d.pdf Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) I2PAK Tube
Produkt ist nicht verfügbar
HUF75639S3 HUF75639S3 Hersteller : ON Semiconductor huf75639s3s-d.pdf Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) I2PAK Tube
Produkt ist nicht verfügbar