auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 8.87 EUR |
| 10+ | 7.44 EUR |
| 25+ | 7.05 EUR |
| 100+ | 6.03 EUR |
| 250+ | 5.69 EUR |
| 500+ | 5.36 EUR |
| 800+ | 4.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HUFA76645S3ST-F085 onsemi / Fairchild
Description: MOSFET N-CH 100V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote HUFA76645S3ST-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
HUFA76645S3ST_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 100V 75A D2PAK |
auf Bestellung 58966400 Stücke: Lieferzeit 21-28 Tag (e) |
|
|
|
HUFA76645S3ST_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 75A D2PAK |
auf Bestellung 58966630 Stücke: Lieferzeit 21-28 Tag (e) |
|
|
|
HUFA76645S3ST_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 75A D2PAK |
auf Bestellung 66400 Stücke: Lieferzeit 21-28 Tag (e) |
|
 |
HUFA76645S3ST-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 75A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
 |
HUFA76645S3ST-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |