IGZ50N65H5XKSA1 Infineon Technologies
auf Bestellung 42 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 12.58 EUR |
| 10+ | 10.53 EUR |
| 100+ | 8.87 EUR |
| 240+ | 7.51 EUR |
| 480+ | 7.38 EUR |
| 1200+ | 5.98 EUR |
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Technische Details IGZ50N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/250ns, Switching Energy: 410µJ (on), 190µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 109 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 273 W.
Weitere Produktangebote IGZ50N65H5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IGZ50N65H5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGZ50N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IGZ50N65H5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 85A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/250ns Switching Energy: 410µJ (on), 190µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
Produkt ist nicht verfügbar |
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IGZ50N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |