IHW30N65R5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/220ns
Switching Energy: 850µJ (on), 240µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
auf Bestellung 413 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.73 EUR |
| 30+ | 5.32 EUR |
| 120+ | 4.56 EUR |
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Technische Details IHW30N65R5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 29ns/220ns, Switching Energy: 850µJ (on), 240µJ (off), Test Condition: 400V, 30A, 13Ohm, 15V, Gate Charge: 153 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 176 W.
Weitere Produktangebote IHW30N65R5XKSA1 nach Preis ab 3.38 EUR bis 6.97 EUR
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IHW30N65R5XKSA1 | Hersteller : Infineon Technologies |
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IHW30N65R5XKSA1 | Hersteller : Infineon Technologies |
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IHW30N65R5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 88W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 153nC Kind of package: tube Turn-off time: 228ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IHW30N65R5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 88W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 153nC Kind of package: tube Turn-off time: 228ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |