IKZ75N65NH5XKSA1 Infineon Technologies
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Technische Details IKZ75N65NH5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 52ns/412ns, Switching Energy: 880µJ (on), 520µJ (off), Test Condition: 400V, 37.5A, 27Ohm, 15V, Gate Charge: 166 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 395 W.
Weitere Produktangebote IKZ75N65NH5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKZ75N65NH5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKZ75N65NH5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 90A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 52ns/412ns Switching Energy: 880µJ (on), 520µJ (off) Test Condition: 400V, 37.5A, 27Ohm, 15V Gate Charge: 166 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
Produkt ist nicht verfügbar |