IPA60R190C6XKSA1 Infineon Technologies
auf Bestellung 333 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.45 EUR |
| 10+ | 7.07 EUR |
| 100+ | 5.72 EUR |
| 500+ | 4.99 EUR |
| 1000+ | 4 EUR |
| 5000+ | 3.85 EUR |
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Technische Details IPA60R190C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPA60R190C6XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA60R190C6XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1637 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R190C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA60R190C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA60R190C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA60R190C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPA60R190C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |