IPA65R065C7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
auf Bestellung 395 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 20.1 EUR |
10+ | 17.24 EUR |
100+ | 14.37 EUR |
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Technische Details IPA65R065C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 850µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V.
Weitere Produktangebote IPA65R065C7XKSA1 nach Preis ab 11.08 EUR bis 20.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA65R065C7XKSA1 | Hersteller : Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS |
auf Bestellung 457 Stücke: Lieferzeit 14-28 Tag (e) |
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IPA65R065C7XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R065C7XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R065C7XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 65mΩ Kind of package: tube Power dissipation: 34W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 15A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 65mΩ Kind of package: tube Power dissipation: 34W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 15A |
Produkt ist nicht verfügbar |