auf Bestellung 7003 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.35 EUR |
| 10+ | 12.06 EUR |
| 25+ | 11.39 EUR |
| 100+ | 9.78 EUR |
| 250+ | 9.2 EUR |
| 500+ | 8.68 EUR |
| 1000+ | 7.44 EUR |
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Technische Details IPB120N08S403ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 223µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB120N08S403ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPB120N08S403ATMA1 | Hersteller : Infineon |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB120N08S403ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
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IPB120N08S403ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPB120N08S403ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |