IPB240N04S41R0ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17682 pF @ 25 V
auf Bestellung 963 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 10.87 EUR |
| 10+ | 9.77 EUR |
| 100+ | 8.01 EUR |
| 500+ | 6.81 EUR |
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Technische Details IPB240N04S41R0ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 240A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4V @ 180µA, Supplier Device Package: PG-TO263-7-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17682 pF @ 25 V.
Weitere Produktangebote IPB240N04S41R0ATMA1
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IPB240N04S41R0ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17682 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPB240N04S41R0ATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |