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IPB80R290C3AATMA2

IPB80R290C3AATMA2 Infineon Technologies

Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210 Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+7.16 EUR
2000+ 6.74 EUR
Mindestbestellmenge: 1000
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Technische Details IPB80R290C3AATMA2 Infineon Technologies

Description: MOSFET N-CH 800V 17A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB80R290C3AATMA2 nach Preis ab 7.36 EUR bis 14.09 EUR

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IPB80R290C3AATMA2 IPB80R290C3AATMA2 Hersteller : Infineon Technologies Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210 Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9641 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.86 EUR
10+ 11.63 EUR
100+ 9.41 EUR
500+ 8.37 EUR
Mindestbestellmenge: 2
IPB80R290C3AATMA2 IPB80R290C3AATMA2 Hersteller : Infineon Technologies Infineon_IPB80R290C3A_DS_v02_00_EN-1731728.pdf MOSFET AUTOMOTIVE
auf Bestellung 438 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.09 EUR
10+ 11.86 EUR
25+ 11.21 EUR
100+ 9.59 EUR
250+ 9.05 EUR
500+ 8.66 EUR
1000+ 7.36 EUR
Mindestbestellmenge: 4
IPB80R290C3AATMA2 Hersteller : Infineon Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB80R290C3AATMA2 IPB80R290C3AATMA2 Hersteller : Infineon Technologies infineon-ipb80r290c3a-ds-v02_00-en.pdf Cool MOS Power Transistor
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