IPD50R800CEAUMA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.41 EUR |
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Technische Details IPD50R800CEAUMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO252-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.
Weitere Produktangebote IPD50R800CEAUMA1 nach Preis ab 0.45 EUR bis 1.77 EUR
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 550V 5A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
Description: CONSUMER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
Description: CONSUMER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
auf Bestellung 5199 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 816 Stücke: Lieferzeit 14-28 Tag (e) |
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 550V 5A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50R800CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 550V 5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |