IPD80R750P7ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.55 EUR |
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Technische Details IPD80R750P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V.
Weitere Produktangebote IPD80R750P7ATMA1 nach Preis ab 1.45 EUR bis 3.74 EUR
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IPD80R750P7ATMA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_NEW |
auf Bestellung 2826 Stücke: Lieferzeit 14-28 Tag (e) |
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IPD80R750P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V |
auf Bestellung 4513 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD80R750P7ATMA1 | Hersteller : Infineon Technologies |
P7 Power Transistor |
Produkt ist nicht verfügbar |
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IPD80R750P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Mounting: SMD Drain-source voltage: 800V Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: CoolMOS™ P7 Case: PG-TO252-3 Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD80R750P7ATMA1 | Hersteller : Infineon Technologies |
P7 Power Transistor |
Produkt ist nicht verfügbar |
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IPD80R750P7ATMA1 | Hersteller : Infineon Technologies |
P7 Power Transistor |
Produkt ist nicht verfügbar |
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IPD80R750P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Mounting: SMD Drain-source voltage: 800V Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: CoolMOS™ P7 Case: PG-TO252-3 Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |