IPDH4N03LAG

IPDH4N03LAG Infineon Technologies


IP%28D%2CS%29H4N03LA_G.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 2390 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
12+ 2.33 EUR
100+ 2.04 EUR
500+ 1.92 EUR
1000+ 1.89 EUR
Mindestbestellmenge: 10
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Technische Details IPDH4N03LAG Infineon Technologies

Description: MOSFET N-CH 25V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 2V @ 40µA, Supplier Device Package: PG-TO252-3-11, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V.

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IPDH4N03LA-G Hersteller : infineon 07+ to-252/d-pak
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IPDH4N03LA-G Hersteller : infineon to-252/d-pak
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IPDH4N03LAG Hersteller : infineon IP%28D%2CS%29H4N03LA_G.pdf to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IPDH4N03LAG IPDH4N03LAG Hersteller : Infineon Technologies IP%28D%2CS%29H4N03LA_G.pdf Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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