IPI80N06S3L-05 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
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Technische Details IPI80N06S3L-05 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 115µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V.