IPI80N06S407AKSA2 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 418 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.65 EUR |
| 30+ | 2.39 EUR |
| 36+ | 2 EUR |
| 38+ | 1.89 EUR |
| 250+ | 1.83 EUR |
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Technische Details IPI80N06S407AKSA2 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 80A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: PG-TO262-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPI80N06S407AKSA2 nach Preis ab 1.83 EUR bis 4.84 EUR
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IPI80N06S407AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Pulsed drain current: 320A Power dissipation: 79W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 27nC Kind of channel: enhanced |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI80N06S407AKSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPI80N06S407AKSA2 | Hersteller : Infineon Technologies |
MOSFET MOSFET |
auf Bestellung 5 Stücke: Lieferzeit 14-28 Tag (e) |
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| IPI80N06S407AKSA2 | Hersteller : Infineon |
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 IPI80N06S407AKSA2 TIPI80N06S4-07 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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IPI80N06S407AKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |