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IPL60R185C7AUMA1

IPL60R185C7AUMA1 Infineon Technologies

Infineon_IPL60R185C7_DS_v02_01_EN-3164671.pdf Hersteller: Infineon Technologies
MOSFET HIGH POWER_NEW
auf Bestellung 1663 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+8.94 EUR
10+ 8.03 EUR
100+ 6.6 EUR
500+ 5.62 EUR
1000+ 4.73 EUR
3000+ 4.5 EUR
6000+ 4.47 EUR
Mindestbestellmenge: 6
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Technische Details IPL60R185C7AUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 13A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 4V @ 260µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V.

Weitere Produktangebote IPL60R185C7AUMA1 nach Preis ab 5.03 EUR bis 9.52 EUR

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Preis ohne MwSt
IPL60R185C7AUMA1 IPL60R185C7AUMA1 Hersteller : Infineon Technologies Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 2998 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.52 EUR
10+ 8.54 EUR
100+ 7 EUR
500+ 5.96 EUR
1000+ 5.03 EUR
Mindestbestellmenge: 3
IPL60R185C7AUMA1 IPL60R185C7AUMA1 Hersteller : Infineon Technologies Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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