IPN60R2K1CE

IPN60R2K1CE Infineon Technologies


INFN-S-A0002456420-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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Technische Details IPN60R2K1CE Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-SOT223-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.

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IPN60R2K1CE IPN60R2K1CE Hersteller : Infineon Technologies Infineon_IPN60R2K1CE_DS_v02_00_EN-1227090.pdf MOSFET CONSUMER
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