auf Bestellung 897 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 10.63 EUR |
10+ | 8.92 EUR |
25+ | 8.45 EUR |
100+ | 7.23 EUR |
240+ | 6.79 EUR |
480+ | 6.4 EUR |
1200+ | 5.49 EUR |
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Technische Details IPW60R160P6 Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 750µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V.
Weitere Produktangebote IPW60R160P6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPW60R160P6 | Hersteller : Infineon |
auf Bestellung 31680 Stücke: Lieferzeit 21-28 Tag (e) |
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IPW60R160P6 | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 750µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V |
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