IPW60R160P6

IPW60R160P6 Infineon Technologies


Infineon_IPX60R160P6_DS_v02_02_EN-1659685.pdf Hersteller: Infineon Technologies
MOSFET HIGH POWER_LEGACY
auf Bestellung 897 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.63 EUR
10+ 8.92 EUR
25+ 8.45 EUR
100+ 7.23 EUR
240+ 6.79 EUR
480+ 6.4 EUR
1200+ 5.49 EUR
Mindestbestellmenge: 5
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Technische Details IPW60R160P6 Infineon Technologies

Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 750µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V.

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IPW60R160P6 Hersteller : Infineon Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
auf Bestellung 31680 Stücke:
Lieferzeit 21-28 Tag (e)
IPW60R160P6 IPW60R160P6 Hersteller : Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
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