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IPW65R280C6FKSA1 Infineon Technologies

Name: IPW65R280C6FKSA1
Brand: Infineon Technologies
SKU: 25626703-3
Price: 3.71 EUR
Availability: InStock

IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0

Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V

auf Bestellung 200 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
200+	3.71 EUR

Mindestbestellmenge: 200

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Technische Details IPW65R280C6FKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 13.8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO247-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.

Weitere Produktangebote IPW65R280C6FKSA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IPW65R280C6FKSA1	Hersteller : Infineon Technologies	Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-247 Tube	Produkt ist nicht verfügbar
IPW65R280C6FKSA1	Hersteller : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke	Produkt ist nicht verfügbar
IPW65R280C6FKSA1	Hersteller : Infineon Technologies	Description: MOSFET N-CH 650V 13.8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V	Produkt ist nicht verfügbar
IPW65R280C6FKSA1	Hersteller : Infineon Technologies	MOSFET LOW POWER_LEGACY	Produkt ist nicht verfügbar
IPW65R280C6FKSA1	Hersteller : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced	Produkt ist nicht verfügbar