auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.36 EUR |
| 10+ | 12.76 EUR |
| 25+ | 11 EUR |
| 100+ | 10.17 EUR |
| 240+ | 9.56 EUR |
| 480+ | 8.84 EUR |
| 1200+ | 8.73 EUR |
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Technische Details IPZ65R065C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 33A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 4V @ 850µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V.
Weitere Produktangebote IPZ65R065C7XKSA1 nach Preis ab 11.36 EUR bis 15.89 EUR
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IPZ65R065C7XKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 33A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: PG-TO247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
auf Bestellung 235 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ65R065C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IPZ65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IPZ65R065C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |