IRCZ24PBF
Hersteller: auf Bestellung 1080 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IRCZ24PBF
Description: MOSFET N-CH 55V 17A TO220-5, Packaging: Tube, Package / Case: TO-220-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V, FET Feature: Current Sensing, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-5, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V.
Weitere Produktangebote IRCZ24PBF
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IRCZ24PBF TO-220-5 Produktcode: 113753 |
Transistoren > MOSFET N-CH |
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| IRCZ24PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 55V 17A TO220-5 Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V FET Feature: Current Sensing Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-5 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
Produkt ist nicht verfügbar |