IRF2907ZSTRLPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 75V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.57 EUR |
| 1600+ | 4.77 EUR |
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Technische Details IRF2907ZSTRLPBF Infineon Technologies
Description: MOSFET N-CH 75V 160A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IRF2907ZSTRLPBF nach Preis ab 4.5 EUR bis 9.28 EUR
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 160A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
auf Bestellung 2562 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 75V 170A 4.5mOhm 180nC |
auf Bestellung 70 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF2907ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF2907ZSTRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF2907ZSTRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |