IRF3315PBF

IRF3315PBF Infineon Technologies


irf3315pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRF3315PBF Infineon Technologies

Description: MOSFET N-CH 150V 23A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.

Weitere Produktangebote IRF3315PBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRF3315PBF IRF3315PBF Hersteller : Infineon Technologies irf3315pbf.pdf?fileId=5546d462533600a4015355df13d21915 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRF3315PBF IRF3315PBF Hersteller : Infineon Technologies Infineon_IRF3315_DataSheet_v01_01_EN-1732422.pdf MOSFET 70mOhm 63.3nC
Produkt ist nicht verfügbar